Choi, HS Kim, EH Choi, IH Kim, YT Choi, JH Lee, JY 2024-01-21T12:11:10Z 2024-01-21T12:11:10Z 2021-09-04 2001-06-01 0040-6090 https://pubs.kist.re.kr/handle/201004/140400 We have investigated metal/ferroelectric/insulator/semiconductor (MFIS) structure with strontium bismuth tantalate (SBT) as ferroelectric thin film and ZrO2 as the insulating buffer layer. Sr0.8Bi2.4Ta2O9 thin films were prepared by metal organic deposition (MOD) method and ZrO2 films were deposited by r.f.-sputtering. Coercive field that decisively affects the memory window was increased greatly by inserting the ZrO2 insulator between SET and SiO2 and, thus, the memory window also increases with an electric field to the SET. Memory windows of MFIS structure were in the range of 0.3-2.6 V when the gate voltage varied from 3 to 10 V. Memory windows of MFIS structure were found to be dependent on the thickness of the buffer layer. We observed the maximum memory window in MFIS with a 28-nm thickness of ZrO2 layer. Auger electron spectroscopy (AES) depth profile and high resolution transmission electron microscopy (HRTEM) of SBT/ZrO2 (28 nm)/Si structure showed that the ZrO2 thin films as a buffer layer helped to prevent the formation of interfacial layer and interdiffusion between SET and Si. (C) 2001 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE SA THIN-FILMS MEMORIES The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate oxide structure Article 10.1016/S0040-6090(01)00826-4 1 THIN SOLID FILMS, v.388, no.1-2, pp.226 - 230 THIN SOLID FILMS 388 1-2 226 230 scie scopus 000168403900036 2-s2.0-0035372193 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article THIN-FILMS MEMORIES ferroelectric MFIS structure memory window buffer layer