Kim, MG Yun, Z Lyou, J Cho, S Park, YJ Kim, EK 2024-01-21T12:13:57Z 2024-01-21T12:13:57Z 2021-09-05 2001-06 0374-4884 https://pubs.kist.re.kr/handle/201004/140450 We performed visible photoluminescence and scanning electron micrograph measurements on several porous poly-Si/Si and a-Si/Si structures. We found that the porous interfacial layer between the thin film and the substrate determined the optoelectronic properties for the structures. With the results, we present a model for porous structures based on the quantum confinement effect in silicon wires; the decreasing emission intensity and the redshift of photoluminescence originate from the silicon wires in the porous interface formed during all electrochemical process. English KOREAN PHYSICAL SOC SILICON TEMPERATURE FABRICATION WAFERS FILMS Visible photoluminescence from porous poly-Si/Si and amorphous-Si/Si structures Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.38, no.6, pp.750 - 753 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 38 6 750 753 scie scopus kci other 000169303600022 2-s2.0-0035534304 Physics, Multidisciplinary Physics Article SILICON TEMPERATURE FABRICATION WAFERS FILMS porous Si