Cho, S Kim, EK 2024-01-21T12:14:10Z 2024-01-21T12:14:10Z 2021-09-05 2001-06 0022-0248 https://pubs.kist.re.kr/handle/201004/140454 The bandgap narrowing effect of carbon doped GaAs epilayers as a function of substrate orientation, temperature and hole concentration has been investigated using photoluminescence spectroscopy. The bandgap energy of the epilayers shows a strong dependence on the substrate orientation. The dependence results from the difference in carrier concentration at each substrate orientation rather than the lattice mismatch between the carbon doped epilayer and GaAs substrate. The measured temperature dependence of the bandgap energy is well expressed by the Varshni equation. The bandgap narrowing (DeltaE(g)) as a function of hole concentration (p) is found to be DeltaE(g) = -2.5 x 10(-S) p(1/3) and compared with the previously reported results. From the measurements of hole concentration, the effective bandgap at zero temperature is determined in hole concentrations ranging from 10(18) to 10(20)cm(-3). (C) 2001 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV CHEMICAL-VAPOR-DEPOSITION PHOTOLUMINESCENCE SPECTROSCOPY PHASE EPITAXY GAP LUMINESCENCE LPMOCVD Effects of substrate orientation, temperature, and hole concentration on the bandgap energy of carbon-doped GaAs Article 10.1016/S0022-0248(01)00701-1 1 JOURNAL OF CRYSTAL GROWTH, v.226, no.2-3, pp.240 - 246 JOURNAL OF CRYSTAL GROWTH 226 2-3 240 246 scie scopus 000169535100010 2-s2.0-0035366787 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article CHEMICAL-VAPOR-DEPOSITION PHOTOLUMINESCENCE SPECTROSCOPY PHASE EPITAXY GAP LUMINESCENCE LPMOCVD doping metalorganic chemical vapor deposition semiconducting gallium arsenide