Kim, TW Lee, DU Jung, M Lee, JH Kim, HJ Choo, DC Kim, JY Yoon, YS 2024-01-21T12:35:56Z 2024-01-21T12:35:56Z 2022-01-10 2001-04 0022-3697 https://pubs.kist.re.kr/handle/201004/140579 A new approach has been introduced for the fabrication of Ru/p-InP(100) heterostructures with the goal of producing stable Ru contacts and sharp Ru/p-InP heterointerfaces. Atomic force microscopy and X-ray diffraction measurements showed that the Ru film layers grown on InP substrates were polycrystalline thin films with very smooth surfaces. Auger electron spectroscopy and Rutherford backscattering measurements showed that the composition of the as-grown film was Ru and that the Ru/InP interface quality was relatively good. Transmission electron microscopy and selected-area electron-diffraction measurements showed that the grown Ru film was a polycrystalline layer with small grain domains. These results can help improve understanding for the application of Ru/InP heterostructures in high-speed metal-semiconductor field-effect transistors. (C) 2001 Elsevier Science Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD OHMIC CONTACTS THIN-FILMS P-INP GAAS(110) DEPOSITION CLUSTERS Microstructural and interfacial properties of the Ru/p-InP(100) heterostructures Article 10.1016/S0022-3697(00)00228-6 1 JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, v.62, no.4, pp.711 - 715 JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 62 4 711 715 scie scopus 000167511100013 2-s2.0-0035312085 Chemistry, Multidisciplinary Physics, Condensed Matter Chemistry Physics Article OHMIC CONTACTS THIN-FILMS P-INP GAAS(110) DEPOSITION CLUSTERS interfaces semiconductors microstructure