Cho, J Han, S Lee, Y Kim, OK Kim, GH Kim, YW Lim, H Jung, HS 2024-01-21T12:36:09Z 2024-01-21T12:36:09Z 2021-09-05 2001-04 0021-4922 https://pubs.kist.re.kr/handle/201004/140583 Ultrashallow p(+)/n junctions fabricated by plasma source ion implantation (PSII) were studied. After as-implanted samples were spike-annealed at 1000 degreesC and annealed for 5 sat 1000 degreesC, for samples with a background doping concentration of 6x10(17)#/cm(3), ultrashallow junction depths of 548 Angstrom and 745 Angstrom, respectively, could be obtained with an implant energy of 0.5 keV. Also, sheet resistances of 330 Omega/rectangle and 228 Omega/rectangle were acquired, respectively. These junction depths and sheet resistances obtained by the PSII process were found to satisfy 0.15 mum metal oxide semiconductor field effect transistor (MOSFET) applications. English INST PURE APPLIED PHYSICS TRANSIENT ENHANCED DIFFUSION SILICON BORON Plasma source ion implantation for ultrashallow junctions: Low energy and high dose rate Article 10.1143/JJAP.40.2506 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.40, no.4A, pp.2506 - 2507 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 40 4A 2506 2507 scie scopus 000170771700080 2-s2.0-0035302364 Physics, Applied Physics Article TRANSIENT ENHANCED DIFFUSION SILICON BORON plasma source ion implantation ultrashallow junction junction depth 0.15 mu m MOSFET background doping concentration