Lee, YH Ju, BK Kim, DH Oh, MH 2024-01-21T12:36:35Z 2024-01-21T12:36:35Z 2021-09-05 2001-04 0018-9383 https://pubs.kist.re.kr/handle/201004/140591 We introduced thin-film electroluminescent cells (TFEL) with a new multilayered-BaTiO3 layer for the low-voltage driven devices. We begin by simulating the basic parameters for TFEL devices in eletrostatic boundary condition and point out how the insulator parameters influences on the typical operating properties of the devices. Next, we performed the voltage accelerated breakdown testing of the multilayered-BaTiO3 having both high dielectric constant and high breakdown strength. The time-zero-breakdown distribution is shown to be dependent on surface roughness, while the long-term failure studied by time-dependent-dielectric breakdown technique at high field is dependent on the bulk characteristics, i,e,, transition layers within m-BT films. Thirdly, the TFEL, devices were prepared using the multilayered-BaTiO3 as dielectric materials. We observed a decrease of turn-on voltage with increasing thickness and the increase of the maximum over voltage. Finally, typical symmetric capacitance-voltage (C-V) and internal charge-phosphor field characteristics were obtained for the device with thin m-BT layers. With increasing thickness of m-BT the significant asymmetry with respect to the applied voltage polarity was observed. This is a main difference as compared with the symmetric characteristics of conventional TFEL devices with low dielectric constant insulators. The experimental results indicate the fact that a selection of the thickness of upper m-BT and their deposition process would strongly affect the interfacial characteristics as well as hulk characteristics of an as-grown ZnS :Pr, Ce layer. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC BREAKDOWN Comprehensive understandings on the high dielectric constant insulating layers for alternating-current thin-film electroluminescent devices Article 1 IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.4, pp.653 - 660 IEEE TRANSACTIONS ON ELECTRON DEVICES 48 4 653 660 scie scopus 000167985100005 2-s2.0-0035307338 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article BREAKDOWN BaTiO3 electroluminescence insulating films TFEL