Kim, HJ Park, YJ Min, BD Hyon, CK Park, SK Kim, EK Kim, TW 2024-01-21T12:36:45Z 2024-01-21T12:36:45Z 2021-09-04 2001-04 0021-4922 https://pubs.kist.re.kr/handle/201004/140594 We have investigated the dependence of the distributions of InAs quantum dots on the thickness of GaAs buffer layers grown on 2 degrees -off (100) GaAs substrates by metalorganic chemical vapor deposition. When the thickness of the GaAs buffer layers was changed from 7 ML to 70 ML, the terrace widths were transformed from 25 nm to 75 nm due to the bunching effects of Ga adatoms. The magnitudes of the size and the density of InAs quantum dots on 2 degrees -off GaAs (100) substrates, whose terrace widths, were changed by the thickness of the GaAs buffer layer, were successfully manipulated. Wire-shaped InAs quantum dots could also be fabricated by controlling the size and the density of the quantum dots. English INST PURE APPLIED PHYSICS CHEMICAL-VAPOR-DEPOSITION SURFACE LASERS Dependence of buffer layer on the distribution of InAs quantum dots Article 10.1143/JJAP.40.2146 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.40, no.4A, pp.2146 - 2149 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 40 4A 2146 2149 scie scopus 000170771700010 2-s2.0-0035302287 Physics, Applied Physics Article CHEMICAL-VAPOR-DEPOSITION SURFACE LASERS self-assembled quantum dots vicinal GaAs substrate bunching effect transform of the terrace width alignment of quantum dots wire-like quantum dots metalorganic chemical vapor deposition