Choi, HS Kim, YT Kim, SI Choi, IH 2024-01-21T12:36:55Z 2024-01-21T12:36:55Z 2021-09-04 2001-04 0021-4922 https://pubs.kist.re.kr/handle/201004/140597 We propose the Pt/SrBi2Ta2O9/Ta2O5/Si Structure for the application of nondestructive read-out memory. The Ta2O5 films were deposited on p-type Si (100) substrates by rf-magnetron sputtering and the SrBi2Ta2O9 films were deposited by metal organic deposition (MOD) method. Coercive field that decisively affects on the memory window becomes greater by inserting the Ta2O5 buffer layer between ferroelectric thin film and silicon substrate and thus the memory window also increases with an electric field to the SrBi2Ta2O9. The C-V characteristics of the Pt/SrBi2Ta2O9 (195 nm)/Ta2O5 (36 nm)/Si structure show memory window of 0.5-2.7 V at the applied voltage of 3-7 V. The leakage current density is 1.7 x 10(-8) A/cm(2), even at the high voltage of 10 V. English INST PURE APPLIED PHYSICS THIN-FILMS MEMORY Electrical characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si using Ta2O5 as the buffer layer Article 10.1143/JJAP.40.2940 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.40, no.4B, pp.2940 - 2942 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 40 4B 2940 2942 scie scopus 000170771900076 2-s2.0-0035300646 Physics, Applied Physics Article; Proceedings Paper THIN-FILMS MEMORY SrBi2Ta2O9 Ta2O5 coercive field memory window ferroelectric