Choi, BH Park, CM Song, SH Son, MH Hwang, SW Ahn, D Kim, EK 2024-01-21T12:38:10Z 2024-01-21T12:38:10Z 2021-09-04 2001-03-05 0003-6951 https://pubs.kist.re.kr/handle/201004/140619 We report the selective growth of InAs self-assembled quantum dots (SAQDs) on silicon-dioxide/silicon (SiO2/Si) substrates patterned in nanometer scale. The SiO2 thin film is found to be an efficient mask material for prohibiting the growth of InAs SAQDs, while the formation of stable SAQDs is observed on the exposed surface of Si. We have utilized this selectivity to demonstrate almost one-dimensional alignment of InAs SAQDs on Si stripes. The crystallinity of SAQDs is also identified by high-resolution transmission electron microscope observation. Our study opens up a possibility of reliably integrating III-V quantum dot devices with conventional Si circuits. (C) 2001 American Institute of Physics. English AMER INST PHYSICS FABRICATION Selective growth of InAs self-assembled quantum dots on nanopatterned SiO2/Si substrate Article 10.1063/1.1352049 1 APPLIED PHYSICS LETTERS, v.78, no.10, pp.1403 - 1405 APPLIED PHYSICS LETTERS 78 10 1403 1405 scie scopus 000167151300029 2-s2.0-0038897236 Physics, Applied Physics Article FABRICATION selective growth