Han, IK Woo, DH Kim, SH Lee, JI Heo, DC Jeong, JC Johnson, FG Cho, SH Song, JH Heim, PJS Dagenais, M 2024-01-21T12:40:41Z 2024-01-21T12:40:41Z 2021-09-05 2001-03 0374-4884 https://pubs.kist.re.kr/handle/201004/140665 The variation of the light-current characteristics of diffraction-limited high-power laser diodes is investigated with different p-doping profiles in the two-step separate-confinement heterostructure (SCH) 1.55-mum InGaAs-InP laser structure. A dramatic increase in the optical output power is observed in the structure with high delta doping at the heterointerfaces and moderate doping at the thick SCH layer. In the structure, a continuous-wave output power of about 0.8 W at a temperature of 15 degreesC was obtained with the nearly diffraction-limited central lobe of the far field. Such an improvement of device performance is attributed to a reduction of the injected carrier overflow into the SCH layer. English KOREAN PHYSICAL SOC WAVE-GUIDE LASER AMPLIFIERS CW Light-current characteristics of highly p-doped 1.55 mu m diffraction-limited high-power laser diodes Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.38, no.3, pp.177 - 181 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 38 3 177 181 scie scopus kci other 000167502800003 2-s2.0-0035532352 Physics, Multidisciplinary Physics Article WAVE-GUIDE LASER AMPLIFIERS CW laser diode