Kim, HJ Park, YJ Kim, EK Kim, TW 2024-01-21T12:41:39Z 2024-01-21T12:41:39Z 2021-09-05 2001-03 0022-0248 https://pubs.kist.re.kr/handle/201004/140682 We have investigated the dependence of the size distributions of InAs quantum dots grown on 2 degrees -off (1 0 0) GaAs substrate on the thickness of the GaAs buffer layer by metalorganic chemical vapor deposition technique. As the thicknesses of GaAs buffer layers were transformed from 7 to 70 ML, the terrace widths were transformed from 25 to 75 nm by bunching effects of Ga adatoms, It was concluded that not only the thickness of GaAs buffer layer but also the AsH3 partial pressure affected much on the terrace width by which the size of InAs quantum dots was successfully manipulated. The wire-like QDs could also be fabricated by using the size control of the InAs QDs, (C) 2001 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV CHEMICAL-VAPOR-DEPOSITION BEAM EPITAXY ISLANDS LASERS Size control of InAs quantum dots on 2 degrees-off GaAs (100) substrate by the thickness of GaAs buffer layer Article 10.1016/S0022-0248(01)00612-1 1 JOURNAL OF CRYSTAL GROWTH, v.223, no.4, pp.450 - 455 JOURNAL OF CRYSTAL GROWTH 223 4 450 455 scie scopus 000167740900002 2-s2.0-0035276392 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article CHEMICAL-VAPOR-DEPOSITION BEAM EPITAXY ISLANDS LASERS atomic force microscopy metalorganic chemical vapor deposition