Kim, HK Han, SH Seong, TY Choi, WK 2024-01-21T12:41:42Z 2024-01-21T12:41:42Z 2021-09-05 2001-03 0013-4651 https://pubs.kist.re.kr/handle/201004/140683 We have investigated Ti/Au (30/50 nm) ohmic contacts to n-ZnO:Al. The samples are annealed at temperatures of 300 and 500 degreesC for 60 s in a flowing N-2 atmosphere. Current-voltage measurements show that the as-deposited sample is ohmic with a specific contact resistance of 2 X 10(-2) Omega cm(2). However, annealing of the sample at 300 degreesC results in much better ohmic behavior with a contact resistance of 2 X 10(-4) Omega cm(2). Further increase in annealing temperature (500 degreesC) causes the degradation of the ohmic property. Glancing angle X-ray diffraction and Auger electron spectroscopy are used to investigate interfacial reactions between the Ti/Au and ZnO layers. It is shown that both rutile and srilankite TiO2 phases are formed in the as-deposited and annealed samples. It is further shown that annealing at 500 degreesC results in the formation of new phases such as Ti3Au and TiAu2. A possible explanation is given to describe the annealing temperature dependence of the specific contact resistance. (C) 2001 The Electrochemical Society. All rights reserved. English ELECTROCHEMICAL SOC INC FILMS Electrical and structural properties of Ti/Au ohmic contacts to n-ZnO Article 10.1149/1.1346617 1 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.148, no.3, pp.G114 - G117 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 148 3 G114 G117 scie scopus 000167545700048 2-s2.0-0009752567 Electrochemistry Materials Science, Coatings & Films Electrochemistry Materials Science Article FILMS n-ZnO