Park, JS Im, YH Choi, RJ Hahn, YB Choi, CS Lee, SH Lee, JK 2024-01-21T12:45:09Z 2024-01-21T12:45:09Z 2021-09-05 2001-02 1099-0062 https://pubs.kist.re.kr/handle/201004/140742 SrBi2Ta2O9 (SBT) thin films were etched in a planar type inductively coupled plasma (ICP) etcher with different chemistries of Cl-2/Ar, Cl-2/NF3/Ar, and Cl-2/NF3/O-2/Ar. The etch rate was a strong function of gas concentration, ICP source power, and rf chuck power. Cl-2/NF3/Ar and Cl-2/NF3/O-2/Ar plasmas showed maximum etch rates of similar to 1600 Angstrom /min at 5 mTorr, 700 W ICP power, and 150 W rf chuck power. Electrical properties of the SBT films were dependent on the plasma chemistry employed; Cl-2/NF3/O-2/Ar showed the least damage in the films and resulted in the best overall P-E hysteresis loops compared to other chemistries. (C) 2001 The Electrochemical Society. English ELECTROCHEMICAL SOC INC GAN INN Plasma chemistries for dry etching of SrBi2Ta2O9 thin films Article 10.1149/1.1340917 1 ELECTROCHEMICAL AND SOLID STATE LETTERS, v.4, no.2, pp.G17 - G19 ELECTROCHEMICAL AND SOLID STATE LETTERS 4 2 G17 G19 scie scopus 000167325800011 2-s2.0-0035262728 Electrochemistry Materials Science, Multidisciplinary Electrochemistry Materials Science Article GAN INN dry etching