Choi, JH Lee, JY Kim, YT 2024-01-21T12:45:15Z 2024-01-21T12:45:15Z 2021-09-05 2001-02 0022-0248 https://pubs.kist.re.kr/handle/201004/140744 During the solid-phase crystallization of amorphous SrBi2Ta2O9 (SBT) thin films, the grains grew preferentially to the [1 1 0] direction forming elliptical grains. The origin of the [1 1 0]-oriented grain growth is due to the highest ionic packing (0 0 1) SET plane which includes TaO6 octahedra, and the nearest bonding direction of TaO6 octahedra in SBT plane is the [1 1 0] direction. High-resolution transmission electron microscopy acid image computer simulation indicate that antiphase boundary enhances elliptical grain growth between the amorphous matrix and the crystalline SET grain. The formation of a stacking fault results in an antiphase boundary making an atomic step of {0 0 1} planes at the amorphous/crystalline interface. At that interface, a corner of the antiphase boundary acts as preferable nucleation sites by providing an atomic step of {0 0 1} planes and enhances elliptical grain growth in the [1 1 0] direction on {0 0 1} planes. (C) 2001 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV PT/SRBI2TA2O9/CEO2/SIO2/SI STRUCTURE MEMORY TANTALATE High-resolution transmission electron microscopy study on the solid-phase crystallization of amorphous SrBi2Ta2O9 thin films on Si Article 10.1016/S0022-0248(00)01000-9 1 JOURNAL OF CRYSTAL GROWTH, v.223, no.1-2, pp.161 - 168 JOURNAL OF CRYSTAL GROWTH 223 1-2 161 168 scie scopus 000167306600024 2-s2.0-0034825463 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article PT/SRBI2TA2O9/CEO2/SIO2/SI STRUCTURE MEMORY TANTALATE nucleation planar defects oxides perovskites ferroelectric materials