Kang, BK Park, YH Lee, S Choi, SS Lee, J Kamiya, T Park, SH 2024-01-21T12:45:25Z 2024-01-21T12:45:25Z 2021-09-05 2001-02 1041-1135 https://pubs.kist.re.kr/handle/201004/140747 A new method to measure the facet reflectivity of an antireflection (AR)-coated electroabsorption (EA) modulator in the region of operating wavelengths is proposed. First, by measuring induced photocurrent and reflectance simultaneously at the front facet of an EA waveguide, the cleaved facet reflectivity and propagation loss are determined. After coating the facet with AR, the residual reflectivity of AR-coated facet is obtained from the measured photocurrent spectra and the predetermined facet reflectivity. We demonstrate the reflectivity of a double- layer AR-coated EA modulator can be measured to be similar to4 X 10(-4) at 1.55 mum for TE polarization by using the proposed technique. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC AMPLIFIERS Measurement of facet reflectivity of antireflection-coated electroabsorption modulator using induced photocurrent Article 10.1109/68.910505 1 IEEE PHOTONICS TECHNOLOGY LETTERS, v.13, no.2, pp.112 - 114 IEEE PHOTONICS TECHNOLOGY LETTERS 13 2 112 114 scie scopus 000167370900006 2-s2.0-0035246457 Engineering, Electrical & Electronic Optics Physics, Applied Engineering Optics Physics Article AMPLIFIERS antireflection coating electroabsorption modulator facet reflectivity photocurrent