Kim, YJ Kim, TJ Kim, TK Park, B Song, JH 2024-01-21T13:00:51Z 2024-01-21T13:00:51Z 2021-09-04 2001-02 0021-4922 https://pubs.kist.re.kr/handle/201004/140763 Epitaxial layers of Si1-xCx (x = 0.016) were synthesized using ion implantation and solid phase epitaxy (SPE), and the loss kinetics of substitutional carbon was investigated. As annealing temperature and time increase, more carbon atoms were found to diffuse from substitutional to interstitial sites. The activation energy for the loss of substitutional carbon into interstitial sites was obtained over the temperature range, 700-1040 degreesC, using both high-resolution X-ray diffraction (HR-XRD) and Fourier transform infrared spectroscopy (FTIR). Both methods yielded similar activation energies (similar to3 eV) for the loss kinetics. In addition, SPE layers regrown by rapid thermal annealing (RTA) were shown to have better crystalline quality than those regrown by furnace annealing. English INST PURE APPLIED PHYSICS HETEROJUNCTION BIPOLAR-TRANSISTORS SIGEC ALLOYS SILICON SI HETEROSTRUCTURES GROWTH OPTOELECTRONICS IMPLANTATION LAYERS The loss kinetics of substitutional carbon in Si1-xCx regrown by solid phase epitaxy Article 10.1143/JJAP.40.773 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.40, no.2A, pp.773 - 776 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 40 2A 773 776 scie scopus 000168355600065 2-s2.0-0035246485 Physics, Applied Physics Article HETEROJUNCTION BIPOLAR-TRANSISTORS SIGEC ALLOYS SILICON SI HETEROSTRUCTURES GROWTH OPTOELECTRONICS IMPLANTATION LAYERS Si1-xCx SPE substitutional carbon activation energy loss kinetics