Lee, JM Chang, KM Kim, KK Choi, WK Park, SJ 2024-01-21T13:04:14Z 2024-01-21T13:04:14Z 2021-09-05 2001-01 0013-4651 https://pubs.kist.re.kr/handle/201004/140823 The dry etching characteristics of ZnO using an inductively couple plasma (ICP) have been investigated, for the first rime, as functions of plasma chemistry, radio frequency (rf) table power, and ICP power. The CH4/H-2 etchant gases resulted in the highest etch rate of ZnO, suggesting that the etching of Zn in ZnO largely involves a process in which a volatile metallorganic zinc compound, such as Zn(CH3)(gamma) is formed. The etch rate was increased with increasing rf table power, and the highest etch rate of 2000 Angstrom /min was achieved at an rf table power of 200 W (dc bias: -80 V). As the ICP power was increased, the etch rate also increased, which suggests that the plasma density is also an important factor in this process. Furthermore, it was observed that hydrogen-containing plasma etching enhances the band-edge photoluminescence of the ZnO film. (C) 2000 The Electrochemical Society. S0013-4651(00)02-099-1.All rights reserved. English ELECTROCHEMICAL SOC INC CHEMICAL-VAPOR-DEPOSITION ROOM-TEMPERATURE THIN-FILMS GAN Dry etching of ZnO using an inductively coupled plasma Article 10.1149/1.1344554 1 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.148, no.1, pp.G1 - G3 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 148 1 G1 G3 scie scopus 000166129600048 2-s2.0-0035126364 Electrochemistry Materials Science, Coatings & Films Electrochemistry Materials Science Article CHEMICAL-VAPOR-DEPOSITION ROOM-TEMPERATURE THIN-FILMS GAN ZnO