Baik, ES Baik, YJ Jeon, D 2024-01-21T13:05:37Z 2024-01-21T13:05:37Z 2021-09-04 2000-12-01 0040-6090 https://pubs.kist.re.kr/handle/201004/140844 Arrays of cone-shaped diamond tip can be fabricated using conventional dry etching using silicon oxide dots as an etch-resistant mask. In this work, we have investigated how the size of the oxide mask dots influences the shape of the diamond cone tips. Silicon oxide dots (2 mum in diameter, 300 x 300 array) were patterned on a polycrystalline diamond film. The thickness of the oxide mask was chosen to be 400 and 800 nm. Under the given etching condition the 800-nm thick mask resulted in tips with better aspect ratio. This suggested that the longer etching time for a thicker mask helped sharpening the diamond tips. (C) 2000 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE SA ELECTRON-EMISSION FILMS FABRICATION ARRAY Control of diamond micro-tip geometry for field emitter Article 10.1016/S0040-6090(00)01432-2 1 THIN SOLID FILMS, v.377, pp.299 - 302 THIN SOLID FILMS 377 299 302 scie scopus 000166024600052 2-s2.0-18844464900 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper ELECTRON-EMISSION FILMS FABRICATION ARRAY diamond film dry etching field emission field emitter silicon oxide mask