Cho, S Choi, YK Kim, EK 2024-01-21T13:08:52Z 2024-01-21T13:08:52Z 2021-09-05 2000-12 0374-4884 https://pubs.kist.re.kr/handle/201004/140902 We I,resent the optical and the structural properties of self-assembled InAs/GaAs quantum dot (QD) structures grown oil GaAs (100) and (311)A substrates by using molecular beam epitaxy. The photoluminescence (PL) measurements as: a function of the temperature and the excitation power density were performed in a closed-cycle refrigerator in the temperature range from 17 to 280 K. The redshifts of the luminescence emissions from the QDs and the Quantum Wells (QW) followed the Varshni equation. The temperature behaviors of the luminescence for the (100) and the (311)A samples indicated a change in the shapes and thermal quenching activation energies of the QDs. English KOREAN PHYSICAL SOC MOLECULAR-BEAM EPITAXY CHEMICAL-VAPOR-DEPOSITION PHOTOLUMINESCENCE LUMINESCENCE Self-assembled InAs quantum dots on GaAs (100) and (311)A substrates Article 10.3938/jkps.37.1030 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.6, pp.1030 - 1033 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 37 6 1030 1033 scie scopus 000165908600050 Physics, Multidisciplinary Physics Article MOLECULAR-BEAM EPITAXY CHEMICAL-VAPOR-DEPOSITION PHOTOLUMINESCENCE LUMINESCENCE (311)A substrate