Hwang, SM Park, YJ Nah, J Kim, EK Choi, IH 2024-01-21T13:12:46Z 2024-01-21T13:12:46Z 2021-09-05 2000-11 0022-0248 https://pubs.kist.re.kr/handle/201004/140972 The growth behavior of GaAs/AlGaAs epilayers grown on U-shape patterned fusion GaAs(1 0 0) layer on InP substrate has been investigated. The wet etched side-plane of the U-shape pattern of the GaAs fusion layer was (2 1 1)A and (I I 1)B, for stripes aligned along [0(1) over bar 1] and [0 1 1] directions, respectively, whereas (1 1 1)A plane is preferred for both cases in normal GaAs substrates. The evolution of U-shape pattern sidewall from (2 1 1)A to (4 3 3)A for [0(1) over bar 1] direction and from (111)B to (411)B for CO 111 direction was revealed as the growth of GaAs/AlGaAs multi-layers proceeded. The abnormal sidewall facets were considered to be closely related with the fused layers and the enhancement of the lateral growth rate was a major factor to form high-quality epitaxial layers grown on the patterned GaAs fusion layer on InP substrate. These results will be eventually implemented for the fabrication of quantum structures such as quantum wires and dots formed on patterned fusion layers. (C) 2000 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY FACET EVOLUTION PHASE EPITAXY QUANTUM WIRES ALGAAS FABRICATION Growth behavior of GaAs/AlGaAs multi-layers grown on U-grooved GaAs fusion layer on InP substrate Article 10.1016/S0022-0248(00)00767-3 1 JOURNAL OF CRYSTAL GROWTH, v.220, no.1-2, pp.56 - 61 JOURNAL OF CRYSTAL GROWTH 220 1-2 56 61 scie scopus 000165423000009 2-s2.0-0342955067 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY FACET EVOLUTION PHASE EPITAXY QUANTUM WIRES ALGAAS FABRICATION epitaxy wafer fusion GaAs/InP thermal strain MOCVD mu-PL