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<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Lee,&#x20;YH</dcvalue>
<dcvalue element="contributor" qualifier="author">Oh,&#x20;JH</dcvalue>
<dcvalue element="contributor" qualifier="author">Ju,&#x20;BK</dcvalue>
<dcvalue element="contributor" qualifier="author">Oh,&#x20;MH</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-21T13:12:52Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-21T13:12:52Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-09-05</dcvalue>
<dcvalue element="date" qualifier="issued">2000-11</dcvalue>
<dcvalue element="identifier" qualifier="issn">0013-4651</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;140974</dcvalue>
<dcvalue element="description" qualifier="abstract">In&#x20;this&#x20;work&#x20;we&#x20;fabricated&#x20;thin-film&#x20;electroluminescent&#x20;(TFEL)&#x20;cells&#x20;with&#x20;a&#x20;new&#x20;multilayered&#x20;BaTiO3&#x20;layer&#x20;for&#x20;the&#x20;low-voltage-driven&#x20;devices.&#x20;At&#x20;first,&#x20;we&#x20;performed&#x20;the&#x20;voltage&#x20;accelerated&#x20;breakdown&#x20;testing&#x20;of&#x20;the&#x20;multilayered&#x20;BaTiO3&#x20;having&#x20;both&#x20;high&#x20;dielectric&#x20;constant&#x20;and&#x20;high&#x20;breakdown&#x20;strength.&#x20;The&#x20;time-zero-breakdown&#x20;distribution&#x20;is&#x20;shown&#x20;to&#x20;be&#x20;dependent&#x20;on&#x20;surface&#x20;roughness,&#x20;while&#x20;the&#x20;long-term&#x20;failure&#x20;studied&#x20;by&#x20;time-dependent&#x20;dielectric&#x20;breakdown&#x20;technique&#x20;at&#x20;high&#x20;field&#x20;is&#x20;dependent&#x20;on&#x20;the&#x20;bulk&#x20;characteristics,&#x20;i.e.,&#x20;transition&#x20;layer&#x20;within&#x20;multilayered&#x20;BaTiO3&#x20;(m-BT)&#x20;films.&#x20;Second,&#x20;the&#x20;TFEL&#x20;devices&#x20;were&#x20;prepared&#x20;using&#x20;the&#x20;multilayered&#x20;BaTiO3&#x20;as&#x20;dielectric&#x20;materials.&#x20;We&#x20;observed&#x20;a&#x20;decrease&#x20;of&#x20;turn-on&#x20;voltage&#x20;with&#x20;increasing&#x20;thickness&#x20;and&#x20;increase&#x20;of&#x20;the&#x20;maximum&#x20;overvoltage.&#x20;Third,&#x20;typical&#x20;symmetric&#x20;capacitance-voltage&#x20;and&#x20;internal&#x20;charge-phosphor&#x20;field&#x20;characteristics&#x20;were&#x20;obtained&#x20;for&#x20;the&#x20;device&#x20;with&#x20;thin&#x20;m-BT&#x20;layers.&#x20;With&#x20;increasing&#x20;thickness&#x20;of&#x20;m-BT&#x20;the&#x20;significant&#x20;asymmetry&#x20;with&#x20;respect&#x20;to&#x20;the&#x20;applied&#x20;voltage&#x20;polarity&#x20;was&#x20;observed.&#x20;This&#x20;is&#x20;a&#x20;main&#x20;difference&#x20;as&#x20;compared&#x20;with&#x20;the&#x20;symmetric&#x20;characteristics&#x20;of&#x20;conventional&#x20;TFEL&#x20;devices&#x20;with&#x20;low&#x20;dielectric&#x20;constant&#x20;insulators.&#x20;The&#x20;experimental&#x20;results&#x20;indicate&#x20;that&#x20;a&#x20;selection&#x20;of&#x20;the&#x20;thickness&#x20;of&#x20;upper&#x20;m-BT&#x20;and&#x20;their&#x20;deposition&#x20;process&#x20;would&#x20;strongly&#x20;affect&#x20;the&#x20;interfacial&#x20;characteristics&#x20;as&#x20;well&#x20;as&#x20;bulk&#x20;characteristics&#x20;of&#x20;an&#x20;as-grown&#x20;ZnS:Pr,Ce&#x20;layer.&#x20;(C)&#x20;2000&#x20;The&#x20;Electrochemical&#x20;Society.&#x20;S0013-4651(00)01-118-6.&#x20;All&#x20;rights&#x20;reserved.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">ELECTROCHEMICAL&#x20;SOC&#x20;INC</dcvalue>
<dcvalue element="subject" qualifier="none">DIELECTRIC-BREAKDOWN</dcvalue>
<dcvalue element="subject" qualifier="none">DEVICES</dcvalue>
<dcvalue element="title" qualifier="none">Characteristics&#x20;of&#x20;multilayered&#x20;barium&#x20;titanate&#x20;films&#x20;and&#x20;their&#x20;effect&#x20;on&#x20;thin-film&#x20;electroluminescent&#x20;cells</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1149&#x2F;1.1394072</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">JOURNAL&#x20;OF&#x20;THE&#x20;ELECTROCHEMICAL&#x20;SOCIETY,&#x20;v.147,&#x20;no.11,&#x20;pp.4374&#x20;-&#x20;4378</dcvalue>
<dcvalue element="citation" qualifier="title">JOURNAL&#x20;OF&#x20;THE&#x20;ELECTROCHEMICAL&#x20;SOCIETY</dcvalue>
<dcvalue element="citation" qualifier="volume">147</dcvalue>
<dcvalue element="citation" qualifier="number">11</dcvalue>
<dcvalue element="citation" qualifier="startPage">4374</dcvalue>
<dcvalue element="citation" qualifier="endPage">4378</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000090053700067</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-0034323180</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Electrochemistry</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Materials&#x20;Science,&#x20;Coatings&#x20;&amp;&#x20;Films</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Electrochemistry</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Materials&#x20;Science</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">DIELECTRIC-BREAKDOWN</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">DEVICES</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">TFELD</dcvalue>
</dublin_core>
