Kim, HB Son, JH Whang, CN Chae, KH Lee, WS Im, S Kim, SO Woo, JJ Song, JH 2024-01-21T13:32:31Z 2024-01-21T13:32:31Z 2021-09-05 2000-10 0374-4884 https://pubs.kist.re.kr/handle/201004/141070 Photoluminescence (PL) from a Si-ion-irradiated SiO2/Si/SiO2 layer on a Si substrate at room temperature has been studied to elucidate the luminescence behavior under various post-annealing treatments. A luminescence band around 450 nm is observed from the as-irradiated sample, This luminescence band is found to originate from the diamagnetic defect, known as the B-2 band, generated by Si ion irradiation. The intensity of tills band increases with the increasing annealing temperature up to a critical temperature after Si irradiation. The B-2 Land activates at a lower temperature than the radiative defect related to the PL peak around 600 nm. After tilts ion-irradiated samples are annealed at 1100 degrees C, the PL peaks around 450 nm and 600 nm originating from radiative defects disappear, and a new PL peak appears around 720 nm. This luminescence band is associated with the similar to 5-nm-sized Si nanocrystals produced along the Si layer between SiO2 layers. as determined by high resolution transmission electron microscopy. The intensity of the pi, peak fr om the ion-irradiated SiO2/Si/SiO2 laver is stronger than that from the Si-implanted SiO2 film and that from the SiO2/Si/SiO2 layer annealed without Si irradiation. English KOREAN PHYSICAL SOC NANOCRYSTALLINE-SILICON IMPLANTED SIO2 PHOTOLUMINESCENCE FILMS LUMINESCENCE TEMPERATURE MATRIX Light-emitting properties of Si-ion-irradiated SiO2/Si/SiO2 layers Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.4, pp.466 - 470 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 37 4 466 470 scie scopus 000089859700021 2-s2.0-0034347623 Physics, Multidisciplinary Physics Article; Proceedings Paper NANOCRYSTALLINE-SILICON IMPLANTED SIO2 PHOTOLUMINESCENCE FILMS LUMINESCENCE TEMPERATURE MATRIX Photoluminescence Ion irradiation Si/SiO₂ Nanocrystals