Koh, EK Park, YJ Kim, EK Park, CS Lee, SH Lee, JH Choh, SH 2024-01-21T13:33:40Z 2024-01-21T13:33:40Z 2021-09-05 2000-09-29 0921-5107 https://pubs.kist.re.kr/handle/201004/141089 Characteristics of the GaN film affected by the strain field existing in the implanted Si(lll) substrate have been investigated. The Si(lll) substrates were implanted with N+ prior to the film growth. GaN epitaxial films with AlN-buffered and GaN/AlN-buffered layers, respectively, were grown on implanted-substrates by metalorganic chemical vapor deposition. From the Raman scattering and X-ray pole figure measurements, characteristics of GaN films, especially, with AlN-buffered layer were highly affected by the stress-imposed substrates and the better crystalline quality was obtained by employing a highly dosed substrate. (C) 2000 Elsevier Science S.A. All rights reserved. English ELSEVIER SCIENCE SA HETEROEPITAXIAL GROWTH STRAIN SAPPHIRE SILICON RAMAN LAYER EPITAXY NITRIDE ALN Characteristics of GaN films grown on the stress-imposed Si(111) Article 10.1016/S0921-5107(00)00499-2 1 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.77, no.3, pp.268 - 273 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 77 3 268 273 scie scopus 000089670500009 2-s2.0-0034270341 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article HETEROEPITAXIAL GROWTH STRAIN SAPPHIRE SILICON RAMAN LAYER EPITAXY NITRIDE ALN GaN Si(111) substrate implantation buffer-layer stress