Kim, TW Lee, DU Yoon, YS 2024-01-21T13:34:03Z 2024-01-21T13:34:03Z 2021-09-04 2000-09-15 0021-8979 https://pubs.kist.re.kr/handle/201004/141096 SnO2 thin films were grown on p-InP (100) substrates by using radio-frequency magnetron sputtering at low temperature. Transmission electron microscopy (TEM) and electron diffraction pattern measurements showed that these SnO2 thin films were nanocrystalline. The capacitance-voltage measurements at room temperature showed that the type and the carrier concentration of the nominally undoped SnO2 film were n type and approximately 1.62x10(16) cm(-3), respectively. Raman scattering measurements showed that the grain sizes of the nanocrystalline films were below 10 nm, which was in reasonable agreement with the result obtained from the high-resolution TEM measurements. Photoluminescence measurements showed a broad peak below the band-to-band emission. These results can help improve the understanding of SnO2 nanocrystalline films grown on p-InP (100) substrates for applications in high-sensitivity gas sensors. (C) 2000 American Institute of Physics. [S0021-8979(00)00118-3]. English AMER INST PHYSICS QUANTUM DOTS DOPED SNO2 SPECTROSCOPY DEPOSITION NANOPARTICLES SILICON STATES FIELD GAAS ZNO Microstructural, electrical, and optical properties of SnO2 nanocrystalline thin films grown on InP (100) substrates for applications as gas sensor devices Article 10.1063/1.1288021 1 JOURNAL OF APPLIED PHYSICS, v.88, no.6, pp.3759 - 3761 JOURNAL OF APPLIED PHYSICS 88 6 3759 3761 scie scopus 000089034700094 2-s2.0-0001672121 Physics, Applied Physics Article QUANTUM DOTS DOPED SNO2 SPECTROSCOPY DEPOSITION NANOPARTICLES SILICON STATES FIELD GAAS ZNO