Kim, HK Han, SH Seong, TY Choi, WK 2024-01-21T13:34:06Z 2024-01-21T13:34:06Z 2021-09-04 2000-09-11 0003-6951 https://pubs.kist.re.kr/handle/201004/141097 We report on low-resistance ohmic contacts to the moderately doped n-type ZnO:Al(n(d)=2x10(17) cm(-3)) obtained using Ti (30 nm)/Au (50 nm) metallization schemes. Annealed Ti/Au contacts exhibit linear current-voltage characteristics, showing that high-quality ohmic contacts are formed. The Ti/Au scheme produces a specific contact resistance of 2x10(-4) Omega cm(2) when annealed at 300 degrees C for 1 min in a N-2 atmosphere. (C) 2000 American Institute of Physics. [S0003-6951(00)00537-4]. English AMER INST PHYSICS ELECTRICAL-PROPERTIES FILMS Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers Article 10.1063/1.1308527 1 APPLIED PHYSICS LETTERS, v.77, no.11, pp.1647 - 1649 APPLIED PHYSICS LETTERS 77 11 1647 1649 scie scopus 000089170700027 2-s2.0-0000082345 Physics, Applied Physics Article ELECTRICAL-PROPERTIES FILMS ohmic contact