Hwang, SM Choi, IH Park, YJ Hyon, CK Kim, EK Min, SK 2024-01-21T13:36:16Z 2024-01-21T13:36:16Z 2021-09-05 2000-09 0374-4884 https://pubs.kist.re.kr/handle/201004/141133 Both wafer fusion and heteroepitaxy technologies were successfully used to obtain high-quality GaAs layers on InP substrates where the lattice mismatch was 3.7 %. Transmission electron microscopy and scanning electron microscopy were employed to investigate dislocations at the interface and the growth behavior of the GaAs layers grown on a patterned fusion layer on an InP substrate, respectively. We also performed double-crystal X-ray diffraction and photoluminescence measurements to study the structural and the optical properties of the epi-grown layers. It was confirmed that high quality GaAs layers can be grown on InP substrates by combining the wafer fusion method and the enhancement of the lateral growth rate in the patterned region. English KOREAN PHYSICAL SOC CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY PHASE EPITAXY QUANTUM WIRES WAFER FUSION GROWTH ALGAAS FABRICATION TECHNOLOGY INTERFACE Formation of high quality GaAs epilayers on InP substrates by using a patterned GaAs fusion layer Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.3, pp.261 - 265 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 37 3 261 265 scie scopus 000089335100016 2-s2.0-0034338012 Physics, Multidisciplinary Physics Article CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY PHASE EPITAXY QUANTUM WIRES WAFER FUSION GROWTH ALGAAS FABRICATION TECHNOLOGY INTERFACE GaAs fusion layer GaAs epilayers InP substrates