Kim, DG Lee, JJ Choi, YW Lee, S Kang, BK Kim, SH Futakuchi, N Nakano, Y 2024-01-21T13:36:43Z 2024-01-21T13:36:43Z 2021-09-05 2000-09 1041-1135 https://pubs.kist.re.kr/handle/201004/141141 Waveguide-type PnpN depleted optical thyristors operating at 1.55 mu m are proposed and fabricated for the first time. In the optical thyristors, we employ InGaAs/InP multiple quantum-well (MQW) and InGaAsP bulk layers for the active n- and p-layers, The thyristors show sufficient nonlinear s-shape I-V characteristics and spontaneous emission along the waveguide. Very low switching voltages of 2.1 and 2.0 (V) for bulk and MQW thyristors with L = 300 mu m and 350 mu m respectively are measured. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC OPTOELECTRONIC SWITCH HETEROSTRUCTURE Waveguide-type PnpN optical thyristor operating at 1.55 mu m Article 10.1109/68.874241 1 IEEE PHOTONICS TECHNOLOGY LETTERS, v.12, no.9, pp.1219 - 1221 IEEE PHOTONICS TECHNOLOGY LETTERS 12 9 1219 1221 scie scopus 000089823500035 2-s2.0-0034266798 Engineering, Electrical & Electronic Optics Physics, Applied Engineering Optics Physics Article OPTOELECTRONIC SWITCH HETEROSTRUCTURE optical communication systems spontaneous emission waveguide optical thyristor