Park, YK Kim, SI Kim, YT Lee, CW 2024-01-21T13:37:43Z 2024-01-21T13:37:43Z 2021-09-01 2000-09 0374-4884 https://pubs.kist.re.kr/handle/201004/141158 The electrical and the structural properties of tungsten boron nitride (W-B-N) thin films were studied to investigate the effects of boron and nitrogen in the 1000 Angstrom W-B-N diffusion barrier. The W-B-N thin films were deposited by using the RF magnetron sputtering method. The impurities provided a stuffing effect that was very effective for preventing interdiffusion between the interconnection metal and the silicon during the subsequent high-temperature annealing process. The resistivities of the W-B-N thin films were in the range of 140 - 406 mu Omega-cm, depending on the partial pressure ratio of the N-2 gas and the RF power density of the W2B5 target. XRD and electrical-property analyses showed that the W-B-N barriers did not react with Si during the annealing in N-2 gas ambient, even for annealing at 1000 degrees C for 30 min. English KOREAN PHYSICAL SOC Thermal stability of tungsten-boron-nitride thin film as diffusion barrier Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.3, pp.324 - 327 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 37 3 324 327 scie scopus 000089335100029 Physics, Multidisciplinary Physics Article thermal stability W-B-N thin film diffusion barrier