Kim, HB Kim, TG Son, JH Whang, CN Chae, KH Lee, WS Im, S Song, JH 2024-01-21T13:38:12Z 2024-01-21T13:38:12Z 2021-09-05 2000-08-15 0021-8979 https://pubs.kist.re.kr/handle/201004/141166 Si ions were implanted into 100-nm-thick SiO2 layer thermally grown on crystalline Si at an energy of 55 keV with various doses ranging from 1x10(14) to 1x10(17) Si/cm(2) at room temperature. Si ions go through the interface between SiO2 layer and Si substrate generating defects in SiO2 layer and Si substrate as well. Defect-related phenomena were characterized by photoluminescence (PL) and electron spin resonance (ESR) measurements. The PL experiment shows that there exists a dose window for a maximum intensity of luminescence related to radiative defects, while the ESR exhibits that nonradiative defects change from E' centers to P-b centers as the dose increases. It is considered that the intensity is controlled by the density ratio of radiative to nonradiative defects induced by ion implantation. (C) 2000 American Institute of Physics. [S0021-8979(00)05716-9]. English AMER INST PHYSICS ION-IMPLANTATION LIGHT-EMISSION SILICON DIOXIDE CENTERS NANOCRYSTALS SIO2-FILMS WAFERS FILMS Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO2 layers Article 10.1063/1.1305909 1 JOURNAL OF APPLIED PHYSICS, v.88, no.4, pp.1851 - 1854 JOURNAL OF APPLIED PHYSICS 88 4 1851 1854 scie scopus 000088783800024 2-s2.0-0001340146 Physics, Applied Physics Article ION-IMPLANTATION LIGHT-EMISSION SILICON DIOXIDE CENTERS NANOCRYSTALS SIO2-FILMS WAFERS FILMS Ion implantation Photoluminescence Radiative defects SiO₂