Hwang, SM Lee, JY Park, SK Hyon, CK Kim, Y Park, YJ Kim, EK Choi, IH 2024-01-21T13:38:25Z 2024-01-21T13:38:25Z 2021-09-05 2000-08-07 0921-5107 https://pubs.kist.re.kr/handle/201004/141170 Strains existed in wafer fused AlGaAs/GaAs quantum wells on patterned InP substrate was systematically evaluated. The fused layers on the U-grooved substrate were characterized by scanning electron micro sco py and micro-photoluminescence. Through the micro-probing technique, we observed no misfit-strain in the wafer fused interface layer but a little bit of thermal strain resulted from different thermal expansion coefficients in between GaAs and InP matrices. We successfully proved that the concept of strains existed in wafer fused layers by employing the patterned substrate. (C) 2000 Elsevier Science S.A. All rights reserved. English ELSEVIER SCIENCE SA WAFER FUSION GAAS INTERFACE INP Evaluations of strains in fused layers using patterned substrates Article 10.1016/S0921-5107(00)00468-2 1 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.77, no.1, pp.83 - 87 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 77 1 83 87 scie scopus 000088607700015 2-s2.0-0034246071 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article WAFER FUSION GAAS INTERFACE INP micro-PL wafer fusion epitaxy