Chang, SS Choi, GJ Hummel, RE 2024-01-21T13:41:57Z 2024-01-21T13:41:57Z 2021-09-05 2000-07-14 0921-5107 https://pubs.kist.re.kr/handle/201004/141232 We report the photoluminescence (PL) and decay times of spark-processed Ge (sp-Ge) at various temperatures. Further Fourier transform infrareds (FTIR) have been measured. The luminescence peak of sp-Ge is observed around 520 nm with two new shoulder peaks at 410 and 610 nm at room temperature. At low temperature, however, two shoulder peaks become dominant while the green luminescence peak vanishes. Moreover, the PL peak wavelength remains constant during cooling. The decay times are characterized as a fast decay time of a few tens of ns and slow decaying tails in mu s range and independent of measured wavelengths. Further, low temperature luminescence measurements for three luminescence hands of sp-Ge reveal a considerable degree of local disorder. Vibrational modes obtained from FTIR are mainly composed of Ge-O modes with some OH vibration. These results suggest that the origin of PL from sp-Ge is associated with Ge-O related defects rather than the radiative recombination of excitons confined in nanocrystals. (C) 2000 Elsevier Science S.A. All rights reserved. English ELSEVIER SCIENCE SA VISIBLE PHOTOLUMINESCENCE POROUS SILICON NANOCRYSTALLITES GERMANIUM BLUE Optical properties of spark-processed Ge Article 10.1016/S0921-5107(00)00456-6 1 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.76, no.3, pp.237 - 240 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 76 3 237 240 scie scopus 000087718400010 2-s2.0-0033738598 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article VISIBLE PHOTOLUMINESCENCE POROUS SILICON NANOCRYSTALLITES GERMANIUM BLUE spark-processed Ge blue luminescence green luminescence decay times FTIR (Fourier transform infrareds)