Joo, MH Park, KM Choi, WY Song, JH Im, S 2024-01-21T13:43:48Z 2024-01-21T13:43:48Z 2021-09-05 2000-07 0168-583X https://pubs.kist.re.kr/handle/201004/141265 Boron ion implantation for edge termination of Au/n-Si Schottky diode has been studied to enhance the breakdown voltages of the diodes, Ion energies of 30 and 50 keV were adopted to achieve edge-terminated Schottky diodes. Four doses of 1 x 10(13). 1 x 10(14), 1 x 10(15) and 1 x 10(16) B cm(-2) were used for each energy. The Schottky diodes with edge termination show much higher breakdown voltages than the diodes without edge termination if the ion dose is controlled. For instance the diodes treated with low doses achieve high breakdown voltages while the diodes with high doses of 1 x 10(15) and 1 x 10(16) B cm(-2) easily fail at low voltages showing early breakdown and high current leakage. According to the results from current-voltage (I-V), the current leakage is reasoned to result from deep level defects introduced by B inn implantation and the leakage at a reverse bias of -40 V is maintained low up to an elevated temperature of 160 degrees C. (C) 2000 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV DEVICES Enhancing the breakdown voltages of Au/n-Si Schottky diodes by boron ion beam-induced edge termination Article 10.1016/S0168-583X(99)01093-9 1 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, v.168, no.3, pp.399 - 403 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 168 3 399 403 scie scopus 000087924500013 2-s2.0-0033704501 Instruments & Instrumentation Nuclear Science & Technology Physics, Atomic, Molecular & Chemical Physics, Nuclear Instruments & Instrumentation Nuclear Science & Technology Physics Article DEVICES ion implantation defects Schottky diode edge termination breakdown voltage