Cho, JS Yoon, KH Koh, SK 2024-01-21T13:45:12Z 2024-01-21T13:45:12Z 2021-09-04 2000-06-01 0040-6090 https://pubs.kist.re.kr/handle/201004/141290 Changes of crystallinity and microstructure in undoped In2O3 films prepared by oxygen ion-assisted deposition were investigated using X-ray diffraction (XRD) and scanning electron microscope (SEM). The oxygen ion energy was changed from 60 to 500 eV during indium thermal evaporation. The crystallinity and microstructure of the films were closely related to the oxygen ion energy bombarded on the growing surface. Domain structure was obtained in the film deposited at 60 eV. By increasing the oxygen ion energy to 500 eV, the domain structure was changed to grain structure and the crystallinity became preferentially oriented along the [222] direction. It was observed that the electrical properties of the deposited films were closely related to the microstructure of the films. (C) 2000 Elsevier Science S.A. All rights reserved. English ELSEVIER SCIENCE SA TIN Microstructure of indium oxide films in oxygen ion-assisted deposition Article 10.1016/S0040-6090(99)01107-4 1 THIN SOLID FILMS, v.368, no.1, pp.111 - 115 THIN SOLID FILMS 368 1 111 115 scie scopus 000087414000017 2-s2.0-0033747601 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article TIN indium oxide ion bombardment surface morphology electrical properties and measurement