Kim, JS Song, JH Suh, SH 2024-01-21T14:02:44Z 2024-01-21T14:02:44Z 2021-09-05 2000-06 1369-8001 https://pubs.kist.re.kr/handle/201004/141343 We have investigated the structural properties of ZnSe epilayers that were grown by molecular beam epitaxy on (001) GaAs substrate with different tilt angles. Two-dimensional growth mode increased with increasing tilt of (001) GaAs toward [010] direction. This was confirmed by atomic force microscopy (AFM) analysis and double crystal X-ray diffraction. We have obtained ZnSe of high crystalline quality layers on (001) GaAs off oriented toward [010] direction. Light emitting devices that were fabricated by ZnSe wafers grown on 4 degrees off toward [010] GaAs substrate have longer lifetimes than the ones that were grown on nominal (001) GaAs substrate, which provide an evidence that crystalline quality improvement effects may become apparent by using (001) vicinal substrate surfaces. (C) 2000 Elsevier Science Ltd. All rights reserved. English ELSEVIER SCI LTD STACKING-FAULTS LAYERS Growth of high quality of ZnSe epilayers on (001) vicinally oriented GaAs substrate by molecular beam epitaxy Article 10.1016/S1369-8001(00)00033-0 1 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.3, no.3, pp.201 - 205 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 3 3 201 205 scie scopus 000165549600007 2-s2.0-0034204047 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Engineering Materials Science Physics Article STACKING-FAULTS LAYERS MBE ZnSe/GaAs vicinal substrate 2D growth