Kim, TW Yoon, YS 2024-01-21T14:03:56Z 2024-01-21T14:03:56Z 2021-09-04 2000-06 0022-3697 https://pubs.kist.re.kr/handle/201004/141364 Ion-beam-assisted deposition of Fe on p-GaAs (110) at room temperature was performed in order to produce Fe epitaxial films with high quality and Fe/p-GaAs (110) heterostructures with abrupt heterointerfaces. Atomic force microscopy images showed that the root mean square of the average surface roughness of the Fe film was 5.33 Angstrom, and X-ray diffraction and transmission electron microscopy (TEM) measurements showed that the Fe film layers grown on the GaAs (110) substrates were epitaxial films with (110) orientations. Auger electron spectroscopy and TEM measurements showed that the Fe epitaxial films grown on the p-GaAs (110) substrates at room temperature had no significant interdiffusion problems. Based on the experimental results, a possible atomic arrangement of the two unit cells is presented for the Fe (110)/GaAs (110) heterostructure. These results indicate that the Fe epitaxial films grown on p-GaAs (110) substrates at room temperature can be used for GaAs-based metal-semiconductor field-effect transistors and that the Fe/GaAs heterostructures provide motivation to pursue the fabrication of Fe/GaAs superlattices. (C) 2000 Elsevier Science Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD INDUCED MAGNETIC-ANISOTROPY EPITAXIAL-GROWTH IRON FILMS INTERFACE CONTACTS AG(001) GAAS Microstructural and atomic arrangement studies in Fe (110)/GaAs (110) heterostructures Article 10.1016/S0022-3697(99)00398-4 1 JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, v.61, no.6, pp.847 - 851 JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 61 6 847 851 scie scopus 000086823700003 2-s2.0-0033906651 Chemistry, Multidisciplinary Physics, Condensed Matter Chemistry Physics Article INDUCED MAGNETIC-ANISOTROPY EPITAXIAL-GROWTH IRON FILMS INTERFACE CONTACTS AG(001) GAAS heterojunctions epitaxial growth electron microscopy