Hirohata, A Xu, YB Yao, CC Leung, HT Lee, WY Gardiner, SM Hasko, DG Bland, JAC Holmes, SN 2024-01-21T14:05:49Z 2024-01-21T14:05:49Z 2021-09-01 2000-05-01 0021-8979 https://pubs.kist.re.kr/handle/201004/141397 The domain configuration in permalloy wires (30 nm thick, 10 mu m wide, and 205 mu m long) with a wide size range of a narrow central bridge (5 mu m long and w mu m wide; 0.5 less than or equal to w less than or equal to 10 mu m) were investigated in both their demagnetized and remanent states using magnetic force microscopy and the results were confirmed by micromagnetic calculations. At the bridge region, domain walls were found to be shifted by a small external field. Scanning magneto-optical Kerr effect revealed that the coercivity in these structures are the same as that in a straight wire, suggesting that domain wall movement is the dominant process in the magnetization reversal of these structures. (C) 2000 American Institute of Physics. [S0021-8979(00)35408-1]. English AMER INST PHYSICS MAGNETIC FORCE MICROSCOPY RESISTIVITY WIRES Domain wall trapping in controlled submicron ferromagnetic elements Article 10.1063/1.373140 1 JOURNAL OF APPLIED PHYSICS, v.87, no.9, pp.4727 - 4729 JOURNAL OF APPLIED PHYSICS 87 9 4727 4729 scie scopus 000086727200020 Physics, Applied Physics Article; Proceedings Paper MAGNETIC FORCE MICROSCOPY RESISTIVITY WIRES domain wall submicron ferromagnetic elements switching field