Kim, SH Suh, JH Park, JG Kim, Y 2024-01-21T14:11:08Z 2024-01-21T14:11:08Z 2021-09-05 2000-04 0021-4922 https://pubs.kist.re.kr/handle/201004/141490 The influences of defect segregation on electrical properties were investigated for a single grain boundary layer in Nb-doped SrTiO3. The electrical properties were compared with those of a grain embedded with a platinum wire. On the basis of the current-voltage (I-V) characteristics, it was found that the grain boundary of Nb-doped SrTiO3 could be presented as a back-to-back double Schottky model. The segregation of defects, strontium vacancies, in grain boundary was suggested from the results of current-time (I-t) measurement, impedance spectroscopy, and capacitance-voltage (C-V) measurement. It was also postulated that the space charge originating from this defect segregation forms the potential barrier. The activation energy for conduction through a grain boundary changed with applied voltage from 1.60 eV to 0.97 eV. English JAPAN J APPLIED PHYSICS ZINC-OXIDE CERAMICS BARIUM-TITANATE BATIO3 CERAMICS DIELECTRIC-PROPERTIES VOLTAGE CHARACTERISTICS STRONTIUM-TITANATE CHEMISTRY VARISTORS OXYGEN Influence of defect segregation on the electrical properties of nb-doped SrTiO3 grain boundary layer Article 10.1143/JJAP.39.1788 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.39, no.4A, pp.1788 - 1795 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 39 4A 1788 1795 scie scopus 000088909200040 2-s2.0-0000206860 Physics, Applied Physics Article ZINC-OXIDE CERAMICS BARIUM-TITANATE BATIO3 CERAMICS DIELECTRIC-PROPERTIES VOLTAGE CHARACTERISTICS STRONTIUM-TITANATE CHEMISTRY VARISTORS OXYGEN strontium titanate dielectric property impedance spectroscopy grain boundary defect segregation