Lee, JK Eun, KY Chae, HB Baik, YJ 2024-01-21T14:11:14Z 2024-01-21T14:11:14Z 2021-09-05 2000-04 0925-9635 https://pubs.kist.re.kr/handle/201004/141492 Free-standing diamond wafers, 100 mm in diameter, have been deposited by the multi-cathode (seven-cathode) direct-current (DC) plasma-assisted chemical vapor deposition (PACVD) method. The input power was 17.5 kW and the pressure was 100 torr. The methane concentration in hydrogen was between 3.5% and 8% at a constant flow rate of 150 seem, intrinsic tensile stress was controlled by introducing thermal compressive stress with step-down control of the deposition temperature during diamond deposition. A higher growth rate of 10 mu m h(-1) was obtained by raising the methane concentration to 8%, and the deposited diamond wafer showed good thermal conductivity of 12-14 W cm(-1) K-1. Crack-free, homogeneous and flat diamond wafers with 100 mm diameter were obtainable. (C) 2000 Elsevier Science S.A. All rights reserved. English ELSEVIER SCIENCE SA DC DISCHARGE PACVD FILMS CVD Free-standing diamond wafers deposited by multi-cathode, direct-current, plasma-assisted chemical vapor deposition Article 10.1016/S0925-9635(99)00336-2 1 DIAMOND AND RELATED MATERIALS, v.9, no.3-6, pp.364 - 367 DIAMOND AND RELATED MATERIALS 9 3-6 364 367 scie scopus 000087382400026 2-s2.0-0033745789 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper DC DISCHARGE PACVD FILMS CVD CVD diamond stress control thermal conductivity