Han, IK Cho, SH Heim, PJS Woo, DH Kim, SH Song, JH Johnson, FG Dagenais, M 2024-01-21T14:14:06Z 2024-01-21T14:14:06Z 2021-09-05 2000-03 1041-1135 https://pubs.kist.re.kr/handle/201004/141541 We have investigated the dependence of the light-current characteristics of broad-area lasers with different p-doping profiles for a two-step separate-confinement heterostructure (SCH) 1.55-mu m InGaAs-InP laser. A sizable increase of the optical output power is observed in a structure with delta doping at the heterointerfaces and moderate doping in the thick SCH layer. It is also shown that the characteristic temperature (T-o) of the structure with delta doping at the heterointerfaces and moderate doping at the thick SCH layer is almost constant as the measurement temperature is increased. Such an improvement in device performance is attributed to a reduction of carrier leakage to the SCH layer. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC HIGH-POWER 1.5-MU-M DIODES Dependence of the light-current characteristics of 1.55-mu m broad-area lasers on different p-doping profiles Article 10.1109/68.826904 1 IEEE PHOTONICS TECHNOLOGY LETTERS, v.12, no.3, pp.251 - 253 IEEE PHOTONICS TECHNOLOGY LETTERS 12 3 251 253 scie scopus 000086067700009 2-s2.0-0033906224 Engineering, Electrical & Electronic Optics Physics, Applied Engineering Optics Physics Article HIGH-POWER 1.5-MU-M DIODES broad-area lasers electron leakage current high-power semiconductor lasers p-doping quantum-well lasers