Kim, J Byun, D Kim, JS Kum, DW 2024-01-21T14:14:26Z 2024-01-21T14:14:26Z 2021-09-05 2000-03 0022-0248 https://pubs.kist.re.kr/handle/201004/141547 GaN films were deposited on sapphire(0 0 0 1) and Si (1 0 0) subsrmtes by MOCVD using an atomic nitrogen source based on a dielectric barrier discharge (DBD) method. Molecule nitrogen and trimethylgallium (TMG) were separately delivered to the substrates. Wurtzite GaN films, with no trace of cubic GaN. were successfully grown on alpha-Al2O3 substrates even at relatively low temperatures ( < 800 degrees C). Sapphire subrtrate RMS roughness was 5.01 and 1.93 Angstrom before and after the exposure to DBD N-source. respectively. This shows negligible irradiation damage of accelerated N-2(+) ion as well as the effect of smoothening the substrate surfaces with DBD N-source. The PL results exhibited small luminescence at the spectral region of blue and UV but a luminescence around the yellow region (2.5 eV) was detected. This is caused by oxygen impurity from AES analysis. (C) 2000 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV EPITAXIAL-GROWTH BEAM EPITAXY FILMS INN Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge Article 10.1016/S0022-0248(99)00759-9 1 JOURNAL OF CRYSTAL GROWTH, v.210, no.4, pp.478 - 486 JOURNAL OF CRYSTAL GROWTH 210 4 478 486 scie scopus 000085998900009 2-s2.0-0033876790 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article EPITAXIAL-GROWTH BEAM EPITAXY FILMS INN GaN