Choi, SG Kim, YD Yoo, SD Aspnes, DE Woo, DH Kim, SH 2024-01-21T14:16:10Z 2024-01-21T14:16:10Z 2021-09-05 2000-02-01 0021-8979 https://pubs.kist.re.kr/handle/201004/141578 We report optical properties of AlxGa1-xP (0 less than or equal to x less than or equal to 0.52) alloys grown by gas source molecular-beam epitaxy on S-doped GaP(001) substrates. Room-temperature pseudodielectric function spectra from 1.5 to 6.0 eV were obtained by spectroscopic ellipsometry. By applying the parabolic-band critical point model to numerically calculated second energy derivatives of these spectra, we obtained accurate room-temperature values of the E-1, E-0&apos;, E-2, and E-2&apos; critical point energies and their dependence on composition x. (C) 2000 American Institute of Physics. [S0021-8979(00)01003-3]. English AMER INST PHYSICS MOLECULAR-BEAM EPITAXY DIELECTRIC FUNCTION TEMPERATURE-DEPENDENCE INTERBAND-TRANSITIONS ALGAP ALLOYS GAP GROWTH SILICON GAAS Optical properties of AlxGa1-xP (0 <= x <= 0.52) alloys Article 10.1063/1.372011 1 JOURNAL OF APPLIED PHYSICS, v.87, no.3, pp.1287 - 1290 JOURNAL OF APPLIED PHYSICS 87 3 1287 1290 scie scopus 000084822400042 2-s2.0-0002234961 Physics, Applied Physics Article MOLECULAR-BEAM EPITAXY DIELECTRIC FUNCTION TEMPERATURE-DEPENDENCE INTERBAND-TRANSITIONS ALGAP ALLOYS GAP GROWTH SILICON GAAS ellipsometry AlGaP GSMBE