Lee, SK Oh, TS Hyun, DB Hwang, CW 2024-01-21T14:31:43Z 2024-01-21T14:31:43Z 2022-01-10 2000-02 1598-9623 https://pubs.kist.re.kr/handle/201004/141599 Thermoelectric properties of the 0.05 wt.% SbI3-doped n-type Bi-2(Te0.95Se0.05)(3) alloy fabricated by hot pressing at temperatures ranging from 350 degrees C to 550 degrees C, were characterized. The electron concentration of the alloy decreased as the hot pressing temperature increased due to the annealing-out of the excess Te vacancies. When hot pressed at 350 degrees C, a figure-of-merit of 0.75x10(-3)/K was obtained due to the low Seebeck coefficient of -145 mu V/K and relatively high electrical resistivity of 2.05 m Ohm-cm. Upon increasing the hot pressing temperature, however, the figure-of-merit was improved mainly due to the increase of the Seebeck coefficient. A maximum figure-of-merit of 2.1x10(-3)/K was obtained by hot pressing at 550 degrees C. English KOREAN INST METALS MATERIALS ANTISITE DEFECTS CRYSTALS BI2TE3 Thermoelectric properties of the 0.05 wt.% SbI3-doped n-type Bi-2(Te0.95Se0.05)(3) alloy fabricated by the hot pressing method Article 10.1007/BF03026347 1 METALS AND MATERIALS INTERNATIONAL, v.6, no.1, pp.67 - 71 METALS AND MATERIALS INTERNATIONAL 6 1 67 71 scie scopus 000085743300011 2-s2.0-0039030914 Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Materials Science Metallurgy & Metallurgical Engineering Article ANTISITE DEFECTS CRYSTALS BI2TE3 bismuth telluride thermoelectric properties Peltier cooling figure-of-merit hot pressing