Park, SK Lee, C Kim, EK 2024-01-21T14:32:17Z 2024-01-21T14:32:17Z 2021-09-04 2000-02 0361-5235 https://pubs.kist.re.kr/handle/201004/141609 The thermochemical etching behavior of GaAs/AlGaAs multilayer structure during laser beam scanning has been studied. The etch rate changes between GaAs and AlGaAs epilayers as the etching process proceeds through the layered sample. The phenomenon can be explained by the difference of thermal parameters of the heterojunction interface. The local temperature rise from laser irradiation has been calculated to investigate etching characteristics for GaAs and AlGaAs. It is concluded that the good thermal confinement at GaAs/AlGaAs interface produces the wider etch width of GaAs layer than that of AlGaAs layer in GaAs/AlGaAs multilayer. The maximum etch rate of the GaAs/A1GaAs multilayer was 32.5 mu m/sec and the maximum etched width ratio of GaAs to AlGaAs was 1.7. English MINERALS METALS MATERIALS SOC HIGH ELECTRIC-FIELDS QUANTUM-WELLS GAAS DEPOSITION Etching behavior of GaAs/AlGaAs multilayer structure during laser beam scanning Article 10.1007/s11664-000-0141-1 1 JOURNAL OF ELECTRONIC MATERIALS, v.29, no.2, pp.195 - 198 JOURNAL OF ELECTRONIC MATERIALS 29 2 195 198 scie scopus 000085260200004 2-s2.0-0033884220 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Engineering Materials Science Physics Article HIGH ELECTRIC-FIELDS QUANTUM-WELLS GAAS DEPOSITION thermochemical etching GaAs/AlGaAs multilayer thermal confinement local temperature rise etched width ratio