Gardelis, S Smith, CG Lee, WY Barnes, CHW Linfield, EH Ritchie, DA Bland, JAC 2024-01-21T14:32:28Z 2024-01-21T14:32:28Z 2021-09-01 2000-02 1386-9477 https://pubs.kist.re.kr/handle/201004/141612 We present results on spin-polarized electron transport from a ferromagnet to a two-dimensional electron gas system (2DEG). The investigated device consists of an injector and a collector contact made from ferromagnetic permalloy thin films with different coercive fields. That allows parallel or antiparallel magnetization of the contacts in different applied magnetic fields. The conducting medium is a 2DEG formed in an AlSb/InAs quantum well. Data from this device suggest that its resistance is controlled by two different types of spin-valve effect: the first is due to the ferromagnet-semiconductor contact resistance, determined by the zero-field spin-splitting in InAs, and the second is due to the propagation of electrons with a spin imbalance through the 2DEG without spin-scattering. (C) 2000 Elsevier Science B.V. All rights reserved. English ELSEVIER HETEROSTRUCTURES INAS Spin-valve effects in a two-dimensional electron gas system Article 10.1016/S1386-9477(99)00180-0 1 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.6, no.1-4, pp.718 - 721 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 6 1-4 718 721 scie scopus 000085770600170 Nanoscience & Nanotechnology Physics, Condensed Matter Science & Technology - Other Topics Physics Article HETEROSTRUCTURES INAS spin magnetoresistance magnetic thin films