Kim, HB Son, JH Chae, KH Jeong, JY Lee, WS Im, S Song, JH Whang, CN 2024-01-21T14:32:44Z 2024-01-21T14:32:44Z 2021-09-04 2000-01-19 0921-5107 https://pubs.kist.re.kr/handle/201004/141617 Photoluminescence (PL) from the Si ion irradiated SiO2/Si/SiO2 layers on Si substrate at room temperature and elevated substrate temperatures has been studied to elucidate the luminescence origins. The irradiation of Si ions into SiO2/Si/SiO2 layers instead of SiO2 films was performed to improve the PL intensity by increasing the number of proper-sized Si nanocrystals. Before annealing at: high temperature, a luminescence band around 450 nm is observed. This luminescence band was found to originate from the diamagnetic defect known as B-2 band generated by Si ion irradiation. The intensity of this band increases when ion irradiation is carried out at high substrate temperature. After annealing at high temperature, the PL peaks originating from the B-2 band disappear and a new PL peak appears around 700 nm. This luminescence band is associated with similar to 5-nm sized Si nanocrystals. Also it can be found that the PL peak intensity around 700 nm is significantly increased with the high substrate temperature during ion irradiation. Therefore, it is concluded that ion irradiation into SiO2/Si/SiO2 layers is more effective than ion implantation into SiO2 films to obtain an intensive PL peak originating from Si nanocrystals. (C) 2000 Elsevier Science S.A. All rights reserved. English ELSEVIER SCIENCE SA ROOM-TEMPERATURE SILICON NANOCRYSTALS IMPLANTATION LUMINESCENCE Photoluminescence from Si ion irradiated SiO2/Si/SiO2 films with elevated substrate temperature Article 10.1016/S0921-5107(99)00309-8 1 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.69, pp.401 - 405 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 69 401 405 scie scopus 000085591900074 2-s2.0-0033896109 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper ROOM-TEMPERATURE SILICON NANOCRYSTALS IMPLANTATION LUMINESCENCE Si nanocrystals ion beam mixing SiO2 luminescence radiative defects