Kim, JW Son, CS Choi, IH PARK, YOUNG KYUN Kim, Yong Tae Ambacher, O Stutzmann, M 2024-01-21T14:33:02Z 2024-01-21T14:33:02Z 2022-04-05 2000-01 0022-0248 https://pubs.kist.re.kr/handle/201004/141622 Structural properties of AlxGa1-xN epilayers grown on (0 0 0 1) sapphire substrate by molecular beam epitaxy are investigated in the range of A1N molar fraction from 0.16 to 0.76. The A1N molar fraction estimated by X-ray diffraction agrees well with that of Rutherford backscattering spectroscopy, showing a good linear relationship. The uniform Auger electron spectroscopy depth profile and linear dependence of average atomic concentration of all the constituents of AlxGa1-xN epilayers on A1N molar fraction imply that the growth of AlxGa1-xN epilayers with variation of A1N molar fraction is well controlled without the compositional fluctuation in depth of the epilayer. It is observed by atomic force microscopy that the surface grain shape of AlxGa1-xN epilayer changes from roundish to a coalesced one with increasing A1N molar fraction. (C) 2000 Elsevier Science B.V. All rights reserved. English Elsevier BV Structural properties of AlxGa1-xN grown on sapphire by molecular beam epitaxy Article 10.1016/S0022-0248(99)00483-2 1 Journal of Crystal Growth, v.208, no.1-4, pp.37 - 41 Journal of Crystal Growth 208 1-4 37 41 N scopus 000084486400006 2-s2.0-0033898694 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article FIELD-EFFECT TRANSISTOR ALGAN/GAN HETEROSTRUCTURE SIMULATION ALN GAN AlxGa1-xN Rutherford backscattering spectroscopy molecular beam epitaxy X-ray diffraction auger electron microscopy atomic force microscopy