Choi, HJ Lee, JG 2024-01-21T14:36:22Z 2024-01-21T14:36:22Z 2021-09-05 2000-01 0272-8842 https://pubs.kist.re.kr/handle/201004/141682 Stacking faults in SiC whiskers grown by three different growth mechanisms; vapor-solid (VS), two-stage growth (TS) and vapor-liquid-solid (VLS) mechanism in the carbothermal reduction system were investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The content of stacking faults in SiC whiskers increased with decreasing the diameter of whiskers, i.e. the small diameter whiskers (<1 mu m) grown by the VS, TS and VLS mechanisms have heavy stacking faults whereas the large diameter whiskers (>2 mu m) grown by the VLS mechanism have little stacking faults. Heavy stacking faults of small diameter whiskers were probably due to the high specific lateral surface area of small diameter whiskers. (C) 1999 Elsevier Science Ltd and Techna S.r.l. All rights reserved. English ELSEVIER SCI LTD CARBOTHERMAL REDUCTION MATRIX COMPOSITES SIC WHISKERS MICROSTRUCTURE CONDUCTIVITY NITRIDE GROWTH Stacking faults in silicon carbide whiskers Article 10.1016/S0272-8842(99)00011-5 1 CERAMICS INTERNATIONAL, v.26, no.1, pp.7 - 12 CERAMICS INTERNATIONAL 26 1 7 12 scie scopus 000084013100002 2-s2.0-0034460112 Materials Science, Ceramics Materials Science Article CARBOTHERMAL REDUCTION MATRIX COMPOSITES SIC WHISKERS MICROSTRUCTURE CONDUCTIVITY NITRIDE GROWTH whiskers silicon carbide stacking faults