Kim, TW Lee, DU Lee, JH Yoon, YS 2024-01-21T14:38:20Z 2024-01-21T14:38:20Z 2021-09-04 2000-01 0038-1098 https://pubs.kist.re.kr/handle/201004/141717 SnO2 thin films were grown on p-InP (100) substrates by using radio-frequency magnetron sputtering at low temperature. Atomic force microscopy images showed that the root mean square of the average surface roughness of the SnO2 film was 22.6 Angstrom, and X-ray diffraction and transmission electron microscopy (TEM) measurements showed that the SnO2 thin films grown on p-InP substrates were polycrystalline. Auger electron spectroscopy and bright-field TEM measurements showed that the SnO2 thin layers grown on p-InP substrates at 200 degrees C had no significant interdiffusion problems. However, a thin interfacial layer of unknown origin was detected between the SnO2 film and the substrate. These results indicate that the SnO2 epitaxial films grown on p-InP (100) substrates at low temperature hold promise for potential devices based on InP substrates, such as superior stability varistors and high-efficiency solar cells. Even the structure with the unintentionally grown interfacial layer might be used for high-efficiency solar cells. (C) 2000 Elsevier Science Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD RAMAN Surface and microstructural properties of SnO2 thin films grown on p-InP (100) substrates at low temperature Article 10.1016/S0038-1098(00)00231-3 1 SOLID STATE COMMUNICATIONS, v.115, no.9, pp.503 - 507 SOLID STATE COMMUNICATIONS 115 9 503 507 scie scopus 000088352900010 2-s2.0-0034697908 Physics, Condensed Matter Physics Article RAMAN heterojunctions crystal growth scanning and transmission electron microscopy