Lee, JI Brini, J Chovet, A Dimitriadis, CA 2024-01-21T14:43:43Z 2024-01-21T14:43:43Z 2021-09-04 1999-12 0038-1101 https://pubs.kist.re.kr/handle/201004/141813 Applying a thermal activation model, we show that the power index gamma of low frequency noise(1/f(gamma)) in semiconductor structures can often be directly related to the ratio of thermal energy and a characteristic energy of the trap distribution, when there is a significant band tail or band bending. Some examples are discussed. (C) 1999 Elsevier Science Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD LOW-FREQUENCY NOISE 1/F NOISE FLUCTUATIONS TRANSISTORS SILICON On 1/f(gamma) noise in semiconductor devices Article 10.1016/S0038-1101(99)00186-0 1 SOLID-STATE ELECTRONICS, v.43, no.12, pp.2181 - 2183 SOLID-STATE ELECTRONICS 43 12 2181 2183 scie scopus 000084171000012 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article LOW-FREQUENCY NOISE 1/F NOISE FLUCTUATIONS TRANSISTORS SILICON low frequency noise