Jung, SK Song, SH Hwang, SW Park, JH Kim, Y Kim, EK 2024-01-21T14:43:46Z 2024-01-21T14:43:46Z 2021-09-04 1999-12 0921-4526 https://pubs.kist.re.kr/handle/201004/141814 We fabricated and characterized planar quantum dot devices with a single self-assembled quantum dot placed in between two aluminum electrodes separated by 30 nm. The current-voltage characteristics measured from the devices exhibit negative differential resistances at temperatures above 77 K. They are attributed to the 3D-0D-3D resonant tunneling through the InAs self-assembled quantum dot. (C) 1999 Elsevier Science B.V. All rights reserved. English Elsevier BV Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots Article 10.1016/S0921-4526(99)00342-7 1 Physica B: Condensed Matter, v.272, no.1-4, pp.18 - 20 Physica B: Condensed Matter 272 1-4 18 20 N scopus 000084375600007 2-s2.0-0033328757 Physics, Condensed Matter Physics Article; Proceedings Paper ROOM-TEMPERATURE TRANSISTOR SPECTROSCOPY INGAAS planar device self-assembled quantum dot resonant tunneling